Abstract
Single crystals of MoS2 and MoSe2 were grown by chemical vapour transport method using iodine as a transporting agent and characterized by optical microscopy, energy dispersive analysis (EDAX), X-ray powder diffraction (XRD) and Hall mobility at room temperature. The variation of electrical resistance under pressure was monitored in a Bridgman anvil set-up up to 6.5 GPa to identify occurrence of any structural transition. MoS2 and MoSe2 do not undergo any structural transitions under pressure.
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Dave, M., Vaidya, R., Patel, S.G. et al. High pressure effect on MoS2 and MoSe2 single crystals grown by CVT method. Bull Mater Sci 27, 213–216 (2004). https://doi.org/10.1007/BF02708507
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DOI: https://doi.org/10.1007/BF02708507