Abstract
A design, development and validation work of plasma based ‘activated reactive evaporation (ARE) system’ is implemented for the deposition of the silicon films in presence of nitrogen plasma on substrate maintained at room temperature. This plasma based deposition system involves evaporation of pure silicon by e-beam gun in presence of nitrogen plasma, excited by inductively coupled RF source (13.56 MHz). The activated silicon reacts with the ionized nitrogen and the films get deposited on silicon substrate. Different physical and process related parameters are changed. The grown films are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and ellipsometry. The results indicate that the film contains silicon nitride and a phase of silicon oxy nitride deposited even at room temperature. This shows the feasibility of using the ARE technique for the deposition of silicon films in nitrogen plasma.
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References
Bunshah R F 1989Thin Solid Films 107 21
Chin J and Elsner N B 1975J. Vac. Sci. Technol. 12 821
Cotler T J and Chapple Sockol J 1993J. Electrochem. Soc. 140 2071
Hirohata Y, Shimamoto N, Yamashima T and Yabe K 1994Thin Solid Films 425-9 253
Hu S M 1966J. Electrochem. Soc. 113 693
Franz I and Langhinrach W 1969Solid State Electron. 12 955
Fukkutonik M, Fujitsuka M and Okada M 1984Thin Solid Films 120 283
Ibok E, Santana M, Garg S and Kapoor V J 1994The electrochem. soc. proc. (ed.) W D Brown (NJ: Pennington) p. 385
Inorganic Powder Data 1993 JCPDS ICDD, USA
Kern W 1989 inMicroelectronics materials and processes (ed.) R A Levy (The Netherlands: Kluwer Academic Publishers) p. 247
Kern W and Schnable G L 1979IEEE Trans. Electron. Dev. 26 647
Martin P and Exarhos G J 1985J. Vac. Sci. Technol. A3 615
Martinet F, Guegan G, Jesionka J C and Kapoor V J 1983The electrochem. soc. proc. (ed.) W D Brown (NJ: Pennington) p. 190
Nath P and Bunshah R F 1980Thin Solid Films 69 63
Parson G N, Souk J H and Batey J 1992J. Appl. Phys. 13 482
Phatak G and Rakesh Lal 1994Thin Solid Films 245 17
Randhawa S H, Mathews M D and Bunshah R F 1981Thin Solid Films 83 267
Sze S M 1988VLSI technology (New York: McGraw Hill Co.) p. 261
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Patil, S.J., Bodas, D.S., Phatak, G.J. et al. Deposition of silicon films in presence of nitrogen plasma—A feasibility study. Bull Mater Sci 25, 399–402 (2002). https://doi.org/10.1007/BF02708017
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DOI: https://doi.org/10.1007/BF02708017