Abstract
Generally, GaN-based devices are grown on silicon carbide or sapphire substrates. But these substrates are costly and insulating in nature and also are not available in large diameter. Silicon can meet the requirements for a low cost and conducting substrate and will enable integration of optoelectronic or high power electronic devices with Si based electronics. But the main problem that hinders the rapid development of GaN devices based on silicon is the thermal mismatch of GaN and Si, which generates cracks. In 1998, the first MBE grown GaN based LED on Si was made and now the quality of material grown on silicon is comparable to that on sapphire substrate. It is only a question of time before Si based GaN devices appear on the market. This article is a review of the latest developments in GaN based devices on silicon.
Similar content being viewed by others
References
Amano H, Akasaki I, Hiramatsu K, Koide N and Sawaki N 1988Thin Solid Films 163 415
Amano H, Kito M, Hiramatsu K and Akasaki I 1989Jpn. J. Appl. Phys. 28 L2121
Amano Het al 1998Jpn. J. Appl. Phys. 37 L1540
Cao J, Pavlidis D, Eisenbach A, Philippe A, Bru-Chevallier C and Guillot G 1997Appl. Phys. Lett. 71 3880
Cao J, Pavlidis D, Park Y, Singh J and Eisenbach A 1998J. Appl. Phys. 83 3829
Chen Pet al 2001J. Cryst. Growth 225 150
Dadgar Aet al 2000aIPAP Conference Series 1 845
Dadgar A, BlÄsing J, Diez A, Alam A, Heuken M and Krost A 2000bJpn. J. Appl. Phys. 39 L1183
Dadgar Aet al 2001Appl. Phys. Lett. 78 2211
Dadgar A, Poschenrieder M, BlÄsing J, Fehse K, Diez A and Krost A 2002aAppl. Phys. Lett. 80 3670
Dadgar Aet al 2002bPhys. Status Solidi (a) 192 308
Egawa T, Zhang B, Nishikawa N, Ishikawa H, Jimbo T and Umeno M 2002aJ. Appl. Phys. 91 528
Egawa T, Moku T, Ishikawa H, Ohtsuka K and Jimbo T 2002bJpn. J. Appl. Phys. 41 L663
Etzkorn E V and Clarke D R 2001J. Appl. Phys. 89 1025
Feltin E, Beaumont B, Laügt M, de Mierry P, Vennégués P, Leroux M and Gibart P 2001aPhys. Status Solidi (a) 188 531
Feltin Eet al 2001bJpn. J. Appl. Phys. 40 L738
Fu Y, Gulino D A and Higgins R 2000J. Vac. Sci. Technol. A18 965
Guha S and Bojarczuk N A 1998aAppl. Phys. Lett. 72 415
Guha S and Bojarczuk N A 1998bAppl. Phys. Lett. 73 1487
Hashimoto A, Aiba Y, Motizuki T, Ohkubo M and Yamamoto A 1997J. Cryst. Growth 175/176 129
Hearne S, Chason E, Han J, Floro J A, Figiel J, Hunter J, Amano H and Tsong I S T 1999Appl. Phys. Lett. 74 356
Honda Y, Kuroiwa Y, Kawaguchi M and Sawaki N 2002Appl. Phys. Lett. 80 222
Ishigawa H, Zhao G Y, Nakada N, Egawa T, Soga T, Jimbo T and Umeno M 1999aPhys. Status Solidi (a) 176 599
Ishigawa H, Zhao G Y, Nakada N, Egawa T, Jimbo T and Umeno M 1999bJpn. J. Appl. Phys. 38 L492
Javorka P, Alam A, Wolter M, Fox A, Marso M, Heuken M, Lüth H and Kordos P 2002IEEE Electron. Device Lett. 23 4
Kaiser Set al 2000J. Vac. Sci. Technol. B18 733
Koh E K, Park Y J, Kim E K, Park C S, Lee S H, Lee J H and Choh S H 2000J. Cryst. Growth 218 214
Lahréche H, Nataf G, Feltin E, Beaumont B and Gibart P 2001J. Cryst. Growth 231 329
Lee K H, Hong M H, Teker K, Jacob C and Pirouz P 2000Mater. Res. Soc. Symp. Proc. (Pittsburgh: MRS) Vol.622
Manasevit H M, Erdmann F M and Simpson W J 1971J. Elec- trochem. Soc. 118 1864
Marchand Het al 1999MRS Internet J. Nitride Semicond. Res. 42
Nakamura S, Iwasa N, Senoh M and Mukai T 1992Jpn. J. Appl. Phys. 31 1258
Romano L T, Van deWalleC G, Ager III J W, Götz W and Kern R S 2000J. Appl. Phys. 87 7745
Schenk H P D, Feltin E, Vaille M, Gibart P, Kunze R, Schmidt H, Weihnacht M and Doghèche E 2001Phys. Status Solidi(a) 188 537
Schremer A T, Smart J A, Wang Y, Ambacher O, Mac Donald N C and Shealy J R 2000Appl. Phys. Lett. 76 736
Semond F, Lorenzini P, Grandjean N and Massies J 2001Appl. Phys. Lett. 78 335
Steckl A J, Devrajan J, Tran C and Stall R A 1996Appl. Phys. Lett. 69 2264
Terao S, Iwaya M, Nakamura R, Kamiyana S, Amano H and Akasaki I 2001Jpn. J. Appl. Phys. 40 L195
Tran C A, Osinski A, Karlicek R F and Berishev I 1999Appl. Phys. Lett. 75 1494
Yang J W, Lunev A, Simin G, Chitnis A, Shatalov M, Kahn M A, Van Nostrand J E and Gaska R 2000Appl. Phys. Lett. 76 273
Zamir S, Meyler B and Salzman J 2001aAppl. Phys. Lett. 78 288
Zamir S, Meyler B and Salzman J 2001bJ. Cryst. Growth 230 341
Zamir S, Meyler B, Salzman J, Wu F and Golan Y 2001cJ. Appl. Phys. Lett. 91 1191
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Pal, S., Jacob, C. Silicon—a new substrate for GaN growth. Bull Mater Sci 27, 501–504 (2004). https://doi.org/10.1007/BF02707276
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02707276