Abstract
Aluminum films were prepared on H2-plasma pretreated TiN substrates at deposition temperatures of 60-250 °C by metallorganic chemical vapor deposition using dimethylethylamine alane as a precursor. The films were highly pure and the growth rates were 3-50 nm/min, where the lowest deposition temperature was 60 °C. The resistivity was as low as 2.8 μΩcm. High substrate temperatures tended to favor a low resistivity and smooth surface morphology of the films, compared to films with a low temperature at a given thickness. Numerous empty pores appeared in the Al films deposited at a temperature below 150 °C when the film thickness exceeded 200 nm. The number of these pores tended to increase with decrease in temperature. However, in films deposited at temperatures above 200 °C, there were no pores and the large grains were interconnected to a high degree. Higher deposition temperatures yielded a greater preference of the (111) orientation of Al films.
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Kim, DH., Kim, BY. Characteristics of aluminum films prepared by metalorganic chemical vapor deposition using dimethylethylamine alane on the plasma-pretreated TiN surfaces. Korean J. Chem. Eng. 17, 449–454 (2000). https://doi.org/10.1007/BF02706859
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DOI: https://doi.org/10.1007/BF02706859