Removal of organic impurities from the silicon surface by oxygen and UV cleaning

Abstract

We have studied the effect of oxygen and water vapor on the removal of organic impurities from the porous silicon surface under UV irradiation. Infrared spectrum observations of the treated surface suggest that decomposition of oxygen to produce ozone, atomic oxygen, and hydroxyl radical is a rate determination step for the overall cleaning process.

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Correspondence to Sang Heup Moon.

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Kim, CK., Chung, CH. & Moon, S.H. Removal of organic impurities from the silicon surface by oxygen and UV cleaning. Korean J. Chem. Eng. 13, 328–330 (1996). https://doi.org/10.1007/BF02705958

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Key words

  • Porous Silicon
  • UV Cleaning
  • Ozone
  • Atomic Oxygen
  • Hydroxyl Radical