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Energy levels in rectangular quantum well wires based on a modified profile of the heterojunction

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Abstract

The effect of a spatially dependent effective mass on the energy levels in a rectangular quantum wire with finite barrier potential is considered. The heterojunction is modelled by an error function rather than a step function to more accurately model the material transition region at the interface between the two materials. The carrier ground state is calculated using the envelope function approximation for Ga0.47In0.53As/InP and GaAs/Ga0.63Al0.37As systems. The results are lower than those reported before, and are in better agreement with the experimental points.

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  1. Department of Physics, Yasouj University, 75914-353, Yasouj, Iran

    E. Sadeghi

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  1. E. Sadeghi
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Sadeghi, E. Energy levels in rectangular quantum well wires based on a modified profile of the heterojunction. Pramana - J Phys 62, 1167–1172 (2004). https://doi.org/10.1007/BF02705263

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  • DOI: https://doi.org/10.1007/BF02705263

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