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Electrical properties of a-GexSe100-x

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Abstract

In general, the conductivity in chalcogenide glasses at higher temperatures is dominated by band conduction (DC conduction). But, at lower temperatures, hopping conduction dominates over band conduction. A study at lower temperature can, eventually, provide useful information about the conduction mechanism and the defect states in the material. Therefore, the study of electrical properties of GexSe100-x in the lower temperature region (room temperature) is interesting. Temperature and frequency dependence of GexSe100-x (x = 15, 20 and 25) have been studied over different range of temperatures and frequencies. An agreement between experimental and theoretical results suggested that the behaviour of germanium selenium system (GexSe100-x ) have been successfully explained by correlated barrier hopping (CBH) model.

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Authors and Affiliations

  1. Department of Physics, Arak University, 38156, Arak, Iran

    Abdolali Zolanvari

  2. Department of Physics, Panjab University, 160 014, Chandigarh, India

    Navdeep Goyal & S. K. Tripathi

Authors
  1. Abdolali Zolanvari
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  2. Navdeep Goyal
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  3. S. K. Tripathi
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Correspondence to Navdeep Goyal.

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Zolanvari, A., Goyal, N. & Tripathi, S.K. Electrical properties of a-GexSe100-x . Pramana - J Phys 63, 617–625 (2004). https://doi.org/10.1007/BF02704488

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  • DOI: https://doi.org/10.1007/BF02704488

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