Abstract
ZrO 2 films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO 2 films. The films showed their suitability for microelectronic applications.
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Chatterjee, S., Samanta, S.K., Banerjee, H.D. et al. Metallo-organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications. Bull Mater Sci 24, 579–582 (2001). https://doi.org/10.1007/BF02704004
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DOI: https://doi.org/10.1007/BF02704004