Abstract
Two-step growth of ZnO by atomic layer deposition at low temperatures was performed to grow quality ZnO films on silicon substrates: first, the growth of a buffer layer at 130 ‡C and second, the growth of the main layer at 210 ‡C. Structural and optical properties of the ZnO films deposited on ZnO-buffer/Si(111) were investigated as a function of buffer layer thickness. The films showed a strong UV emission at 380 nm and a weak green emission at 520–570 nm. The ZnO films deposited on a 327 å buffer layer showed overall the best surface morphology and structural and optical properties.
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Ashrafi, A.A., Ueta, A., Kumano, H. and Suemune, I., “Role of ZnS Buffer Layers in Growth of Zincblende ZnO on GaAs Substrates by Metalorganic Molecular-beam Epitaxy,”J. Crystal Growth,221, 435 (2000).
Bang, K.H., Hwang, D.K. and Myoung, J. M., “Effects of ZnO Buffer Layer Thickness on Properties of ZnO Thin Films Deposited by Radio-frequency Magnetron Sputtering,”Appl. Surf. Sci.,207, 359 (2003).
Chen, Y. F., Hong, S., Ko, H., Nakajima, M. and Yao, T., “Layer-bylayer Growth of ZnO Epilayer on Al2O3(0001) by using a MgO Buffer Layer,”Appl. Phys. Lett.,76, 559 (2000).
Fuke, S., Teshigawara, H., Kurahara, K., Takano, Y., Ito, T., Yanagihara, M. and Ohtsuka, K., “Influences of Initial Nitridation and Buffer Layer Deposition on the Morphology of a (0001) GaN Layer Grown on Sapphire Substrates,”J. Appl. Phys.,83, 764 (1998).
Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T. and Oki, K., “Growth Mechanism of GaN Grown on Sapphire with A1N Buffer Layer by MOVPE,”J. Cryst. Growth,98, 209 (1991).
Jeong, S.-H., Kim, I.-S., Kim, J.-K. and Lee, B.-T., “Quality Improvement of ZnO Layer on LT-grown ZnO Layer/Si(111) through a Twostep Growth using an RF Magnetron Sputtering,”J. Cryst. Growth,264, 327 (2004).
Jeong, S.-H., Kim, I.-S., Kim, S.-S., Kim, J.-K. and Lee, B.-T., “Homobuffer Layer Effects and Single Crystalline ZnO Hetero-epitaxy on c-Plane Sapphire by a Conventional RF Magnetron Sputtering,”J. Cryst. Growth,264, 110 (2004).
Kim, T.Y., Lee, S.H., Mo, Y. H., Nahm, K. S., Kim, J.Y., Suh, E. K. and Kim, M., “Growth Mechanism of Needle-Shaped ZnO Nanostructures over NiO-coated Si Substrates,”Korean J. Chem. Eng.,21, 733 (2004).
Ko, H.-J., Yao, T., Chen, Y. and Hong, S.-K., “Investigation of ZnO Epilayers Grown under Various Zn/O Ratios by Plasma-assisted Molecular-beam Epitaxy,”J. Appl. Phys.,92, 4354 (2002).
Li, B. S., Liu, Y. C., Shen, D. Z., Lu, Y.M., Zhang, J.Y., Kong, X.G., Fan, X.W. and Zhi, Z. Z., “Growth of High Quality ZnO Thin Films at Low Temperature on Si(100) Substrates by Plasma Enhanced Chemical Vapor Deposition,”J. Vac. Sci. Technol. A,20, 265 (2002).
Lim, J.W., Park, H. S. and Kang, S.W., “Analysis of a Transient Region During the Initial Stage of Atomic Layer Deposition,”J. Appl. Phys.,88, 6327 (2000).
Lin, B., Fu, Z. and Zia, Y., “ Green Luminescent Center in Undoped Zinc Oxide Films Deposited on Silicon Substrates,”Appl. Phys. Lett.,79, 943 (2001).
Nahhas, A., Kim, H. K. and Blachere, J., “Epitaxial Growth of ZnO Films on Si Substrates using an Epitaxial GaN Buffer,”Appl. Phys. Lett.,78, 1511 (2001).
Nakamura, T., Yamada, Y., Kusumori, T., Minoura, H. and Muto, H., “Improvement in the Crystallinity of ZnO Thin Films by Introduction of a Buffer Layer,”Thin Solid Films,411, 60 (2002).
Ogata, K., Kawanishi, T., Maejima, K., Sakurai, K., Fujita, S. and Fugita, S., “ ZnO Growth using Homoepitaxial Technique on Sapphire and Si Substrates by Metalorganic Vapor Phase Epitaxy,”J. Cryst. Growth,237–239, 553 (2002).
Ohgaki, T., Ohashi, N., Kakemoto, H., Wada, S., Adachi, Y., Haneda, H. and Tsurumi, T., “Growth Condition Dependence of Morphology and Electric Properties of ZnO Films on Sapphire Substrates Prepared by Molecular-beam Epitaxy,”J. Appl. Phys.,93, 1961 (2002).
Puchert, M. K., Timbrell, P.Y. and Lamb, R. N., “Postdeposition Annealing of Radio Frequency Magnetron Sputtered ZnO Films,”J. Vac. Sci. Technol. A,14, 2220 (1996).
Ruthe, K. C., Cohen, D. J. and Barnett, S.A., “Low Temperature Epitaxy of Reactively Sputtered ZnO on Sapphire,”J. Vac. Sci. Technol. A,22, 2446 (2004).
Tamargo, M. C.,II-VI Semiconductor Materials and Their Applications, Taylor & Francis, New York (2002).
Vanheusden, K., Seager, C.H., Warren, W. L., Tallant, D. R. and Voiget, J. A., “Correlation Between Photoluminescence and Oxygen Vacancies in ZnO Phosphors,”Appl. Phys. Lett.,68, 403 (1996).
Ye, Y., Gu, S., Zhu, S., Chen, T., Hu, L., Qin, F., Zhang, R., Shi, Y. and Zheng, Y., “The Growth of Single Crystalline ZnO Films by Lowpressure MOCVD,”J. Cryst. Growth,243, 151 (2002).
Zhang, Y., Du, G., Liu, B., Zhu, H. C., Yang, T., Li, W., Liu, D. and Yang, S., “Effects of ZnO Buffer Layer Thickness on Properties of ZnO Thin Films Deposited by Low-pressure MOCVD,”J. Cryst. Growth,262, 456 (2004).
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Lee, S., Im, Y.H. & Hahn, YB. Two-step growth of ZnO films on silicon by atomic layer deposition. Korean J. Chem. Eng. 22, 334–338 (2005). https://doi.org/10.1007/BF02701506
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DOI: https://doi.org/10.1007/BF02701506