Abstract
Regular three-dimensional (3-D) arrays of crystalline SnO2-In2O3 nanowires were produced on m-sapphire using a gold catalyst-assisted vapor-liquid-solid growth process. The growth characteristics at multiple growth conditions were analyzed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), x-ray photoemission spectroscopy (XPS), and Rutherford backscattering spectroscopy (RBS) to evaluate the functional dependence of nanowire structure and composition on growth parameters such as temperature and source composition. The results indicate that nanowires of mixed composition are not possible from the catalytic clusters; rather, a mixture of indium and tin oxide wires are formed in the range of conditions investigated here.
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Nguyen, P., Vaddiraju, S. & Meyyappan, M. Indium and tin oxide nanowires by vapor-liquid-solid growth technique. J. Electron. Mater. 35, 200–206 (2006). https://doi.org/10.1007/BF02692436
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DOI: https://doi.org/10.1007/BF02692436