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A novel multi-valued BAM model with improved error-correcting capability

  • Letters
  • Published:
Journal of Electronics (China)

Abstract

A Hyperbolic Tangent multi-valued Bi-directional Associative Memory (HTBAM) model is proposed in this letter. Two general energy functions are defined to prove the stability of one class of multi-valued Bi-directional Associative Memorys(BAMs), with HTBAM being the special case. Simulation results show that HTBAM has a competitive storage capacity and much more error-correcting capability than other multi-valued BAMs.

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Authors and Affiliations

  1. College of Info. Sci. Tech., Nanjing Univ. of Aeronautics and Astronautics, 210016, Nanjing

    Zhang Daoqiang & Chen Songcan

Authors
  1. Zhang Daoqiang
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  2. Chen Songcan
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Additional information

Supported by the National Natural Science Foundation of China (No.60271017)

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Zhang, D., Chen, S. A novel multi-valued BAM model with improved error-correcting capability. J. of Electron.(China) 20, 220–223 (2003). https://doi.org/10.1007/BF02687708

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  • DOI: https://doi.org/10.1007/BF02687708

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