Abstract
The residual mechanical stress in SiO2 films results in the degradation of mobilities in MOSFETs. Based on the edge force approximation in SiO2 films, the stress field in MOS devices is calculated. The results here are in agreement with those measured by the Raman spectrum method.
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Qingan, H., Qinyi, T. A simple approach to the calculation of the mechanical stress in silicon devices. J. of Electron. (China) 10, 261–267 (1993). https://doi.org/10.1007/BF02684556
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DOI: https://doi.org/10.1007/BF02684556