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Electrical properties of LPCVD poly-silicon doped with oxygen atoms

  • Published:
Journal of Electronics (China)

Abstract

The electrical conductivity of LPCVD polysilicon doped with oxygen atoms (acromym SIPOS) films has been measured to study the electrical properties of SIPOS. The results show that the electrical properties of SIPOS depend on both oxygen contents and annealing processes. The electrical conductivity decreases while the oxygen content in SIPOS increases. The temperature dependence of the electrical conductivity of SIPOS during, annealing shows that there are two kinds of conduction mechanisms, that is, conductivities of SIPOS are concerned in the reaction of Si−O bonds and the recrystallization of SIPOS during low temperature (i500°C) and high temperature (j900°C) annealing, respectively. In addition, the doping effect on the conductivity of SIPOS has been studied. It has been observed that doping made the increase of conductivity in SIPOS, but the oxygen contents apparently suppressed the increase of conductivity in doped-SIPOS.

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Authors and Affiliations

  1. East China Normal University, 200072, Shanghai

    Pan Yaoling & Wang Yunzhen

Authors
  1. Pan Yaoling
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  2. Wang Yunzhen
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Yaoling, P., Yunzhen, W. Electrical properties of LPCVD poly-silicon doped with oxygen atoms. J. of Electron. (China) 10, 181–187 (1993). https://doi.org/10.1007/BF02684545

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  • DOI: https://doi.org/10.1007/BF02684545

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