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Zn-doping in OMVPE Grown lnP:Zn/lnGaAs/lnPp-i-n double heterojunctlons with lnGaAs:Zn contacting layers

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Abstract

We report on the control of zinc in organometallic vapor phase epitaxial (OMVPE) grown InP:Zn/InGaAs/InPp- i- n double heterojunctions with InGaAs:Zn contacting layers. As a function of diethylzinc (DEZn) flow, we measure net acceptor concentrations for the InP:Zn p-layer in the range 2 × 1017≤N a−N d≤ 9 × 1017 cm−3. A 435°C post-growth anneal for 300 sec increases the net acceptor concentrations by a factor of 3.6 − to 6 × 1017≤N a−N d≤ 3 × 1018 cm−3. When the annealed value ofN a − Ndin the InP:Zn layer is 6 × 1017 cm−3 , secondary ion mass spectrometry (SIMS) measurements show abrupt Zn-doping transitions at the heterojunction interfaces. In contrast, when the annealed value ofN a − Ndin the InP:Zn layer is near the saturation value of 3 × 1018 cm−3, SIMS measurements show significant movement of Zn into the nominally undoped InGaAs instrinsic layer. Increasedp-i-n diode capacitance is associated with the Zn movement.

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Authors and Affiliations

  1. Microwave Technology Division, Hewlett-Packard Co., 1412 Fountaingrove Parkway, 95403, Santa Rosa, CA

    F. G. Kellert & S. R. Sloan

  2. Hewlett-Packard Laboratories, Hewlett-Packard Co., 3500 Deer Creek Road, 94303, Palo Alto, CA

    M. J. Ludowise

  3. Circuit Technology Research and Development, Hewlett-Packard Co., P.O. Box 10350, 94303, Palo Alto, CA

    J. E. Turner

Authors
  1. F. G. Kellert
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  2. S. R. Sloan
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  3. M. J. Ludowise
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  4. J. E. Turner
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Kellert, F.G., Sloan, S.R., Ludowise, M.J. et al. Zn-doping in OMVPE Grown lnP:Zn/lnGaAs/lnPp-i-n double heterojunctlons with lnGaAs:Zn contacting layers. J. Electron. Mater. 21, 983–987 (1992). https://doi.org/10.1007/BF02684207

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  • DOI: https://doi.org/10.1007/BF02684207

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