Abstract
A nonlinear distribution model of ions implanted at high doses is developed with allowance for sputtering, volume growth of a target, and retardation by interstitial atoms.
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Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 71, No. 2, pp. 277–281, March–April, 1998.
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Danilyuk, A.L. Nonlinear distribution model of ions implanted at high doses. J Eng Phys Thermophys 71, 279–283 (1998). https://doi.org/10.1007/BF02681548
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DOI: https://doi.org/10.1007/BF02681548