Abstract
Special features of mathematical heat- and mass-transfer models are considered; systems of equations that describe the height change for growing single crystals are determined, and recommendations are given according to which the single-crystal height is practically constant. Under conditions of ideal mixing of a melt, the dopant distribution in the crystal is given.
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Rubies and Sapphires [in Russian], Moscow (1974).
Kh. S. Bagdasarov, L. A. Goryainov, I. G. Belykh, A. S. Selivanov, and E. A. Fedorov, Fiz. Khim., No. 5, 63–67 (1980).
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Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 71, No. 2, pp. 248–253, March–April, 1998.
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Bagdasarov, K.S., Goryainov, L.A. Development of horizontally oriented crystallization of high-melting dielectric single crystals. J Eng Phys Thermophys 71, 248–253 (1998). https://doi.org/10.1007/BF02681543
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DOI: https://doi.org/10.1007/BF02681543