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Astigmatism of the radiation of semiconductor stripe-geometry lasers

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Abstract

The effect of injection current on the intensity and angular distribution of radiation in TE- and TM-polarized modes of diode lasers with a stripe geometry and double GaAs-AlGaAs-based heterostructure is investigated. The analysis of the angular distribution of radiation revealed the nonmonotonic behavior of its astigmatism with increase in the current. The coefficient of astigmatism in the mode of lasing is substantially higher for the TE-mode than for the TM-mode. An increase in radiation astigmatism is accompanied by a decrease in the differential effectiveness and polarization degree. These specific features are explained by the interaction of the defocusing action of distribution of the refractive index n(x) in the plane of the p-n-transition with a minimum under the center of the stripe contract (at x=0) with the focusing action of the gain coefficient distribution.

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Authors and Affiliations

  1. I. I. Mechnikov Odessa State University, 2, Dvoryanskaya Str., 65100, Odessa, Ukraine

    A. A. Ptashchenko & F. A. Ptashchenko

Authors
  1. A. A. Ptashchenko
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  2. F. A. Ptashchenko
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Correspondence to A. A. Ptashchenko.

Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 4, pp. 461–464, July–August, 2000.

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Ptashchenko, A.A., Ptashchenko, F.A. Astigmatism of the radiation of semiconductor stripe-geometry lasers. J Appl Spectrosc 67, 629–635 (2000). https://doi.org/10.1007/BF02681296

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  • DOI: https://doi.org/10.1007/BF02681296

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