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Use of optical emission spectroscopy to investigate the process of fabrication ofa-Si:H films in a combined silane-containing discharge

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Abstract

The results of investigations carried out with the aid of optical emission spectroscopy and concerned with the process of deposition of amorphous hydrogenated silicon (a-Si:H) films in a combined discharge are presented. Correlations between the intensities of emission lines and bands and the rate of the deposition of films were established. To control the quality of films, it is proposed to record changes in the intensity of the atomic hydrogen line (Hβ) during the deposition of a-Si:H. A comparison of plasma radiation spectra for different types of discharge was made.

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Authors and Affiliations

  1. Belarusian State University of Information Science and Radioelectronics, 6 P. Brovka Str., Minsk

    D. I. Grunskii

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  1. D. I. Grunskii
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 4, pp. 423–426, July–August, 2000.

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Grunskii, D.I. Use of optical emission spectroscopy to investigate the process of fabrication ofa-Si:H films in a combined silane-containing discharge. J Appl Spectrosc 67, 573–578 (2000). https://doi.org/10.1007/BF02681287

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  • DOI: https://doi.org/10.1007/BF02681287

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