Anisotropy of electrical properties of lead doped extruded samples of Bi₈₅Sb₁₅

Abstract

Thin films of Bi₈₅Sb₁₅ solid solution wich can be used in thermoelectric devices for cooling and stabilizing the temperature of Gann and Impatt diodes have been obtained by extrusion method. They have surface roughness in the range 10–80µm, dielectric lossestan δ ∼ 10⁻³ at 10 GHz, thermal conductivityβ ∼ 4x10² W / (M · K).

Anisotropy of electroconductivityσ, thermoelectric powerα and Hall coefficientsR _H of lead doped extruded Bi₈₅Sb₁₅ samples has been investigated in the temperature range between 77 K and 300 K and in the presence of magnetic fieldH up to ∼ 74×10⁴ A/m. It is shown that the value and sign of the anisotropy coefficient essentially depend on heat treatment and impurity concentration. Experimental results are explained taking into account a crystal structure of Bi₈₅Sb₁₅, formation of texture and generation of deformation defects.