Abstract
The infrared absorption spectra of some beryllium-related acceptor impurity centers in silicon have been measured. Their Fourier self-deconvoluted spectra have been obtained clearly demonstrating that the ground states of some impurity centers have a splitting feature while some consist of only a single component.
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Ho, L.T., Lin, F.Y. Ground-state structure of beryllium-related acceptor impurity centers in silicon. Int J Infrared Milli Waves 18, 463–473 (1997). https://doi.org/10.1007/BF02677933
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DOI: https://doi.org/10.1007/BF02677933