Abstract
Er3+ and Yb3+ ions are introduced into porous silicon films, stabilized by oxidation in an oxygen plasma, in the form of a gadolinium oxychloride-based luminophor by means of thermal diffusion. An investigation is made of the luminescence and photoexcitation spectra of samples with Er3+ (10 and 30 wt.%), Yb3+ (10 wt.%), and Er3, Yb3++ (10 wt.% each). It is shown that the intense IR luminescence (1.00 and 1.54 μm) is caused by cross-relaxation effects. The most effective excitation of the luminescence has been observed in the UV absorption band of the porous silicon.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 3, pp. 428–433, May–June, 1999.
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Filippov, V.V., Kuznetsova, V.V., Khomenko, V.S. et al. Luminescence of an erbium- and ytterbium-containing complex in porous silicon films. J Appl Spectrosc 66, 464–469 (1999). https://doi.org/10.1007/BF02676783
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DOI: https://doi.org/10.1007/BF02676783