Abstract
The effect of chemical treatment of porous silicon samples by HF on its photoluminescence and its evolution with time in sample aging in air is investigated. It is shown that the effect of HF on the luminescence parameters depends on the duration of the treatment and the initial photoluminescence intensity of the sample. It is found that chemical etching in HF accelerates the growth of the total luminescence intensity in aging of the sample in air. The evolution of the photoluminescence spectrum in aging of the sample in air after chemical etching can be explained within the framework of the quantum-size model of the luminescence of porous silicon.
This is a preview of subscription content, log in via an institution to check access.
References
L. T. Canham,Appl. Phys. Lett.,57, 1046–1048 (1990).
U. Gösele and V. Lehmann,Solid State Phenom.,32–33, (1993).
E. Takasuka and K. Kamei,Appl. Phys. Lett.,65, 484–486 (1994).
B. Meyer, V. Petrova-Koch, T. Muschik, et al.,Appl. Phys. Lett.,63, 1930–1932 (1993).
M. A. Tischler, R. T. Collins, J. H. Stathis, and J. C. Tsang,Appl. Phys. Lett.,60, 639–641 (1992).
G. Mauckner, K. Thonke, and R. Sauer,J. Phys.: Condens. Matter,5, L9-L14 (1993).
L. T. Canham, M. R. Houlton, W. Y. Leong, et al.,J. Appl. Phys.,70, 422–431 (1991).
S. M. Prokes,J. Appl. Phys.,73, 407–412 (1993).
M. S. Brandt, H. D. Fuchs, M. Stutzmann, et al.,Solid State Commun.,81, 307–312 (1992).
H.-J. Lee, Y. H. Seo, D.-H. Oh, et al.,J. Appl. Phys.,7, 8060–8065 (1994).
V. A. Makara, M. S. Bolotovets', O. V. Vakulenko, et al.,Ukr. Fiz. Zh., No. 11-12, 1090–1092 (1996).
S. M. Hu and D. R. Kerr,J. Electrochem. Soc.,114, 414–419 (1967).
L. Liou, W. G. Spitzer, and S. Prussin,J. Electrochem. Soc.,131, 672–683 (1984).
V. Lehmann and U. Gösele,Appl. Phys. Lett.,58, 856–858 (1991).
B. M. Kostishko, A. M. Orlov, and T. G. Emel'yanova,Pis'ma Zh. Tekh. Fiz.,21, 32–37 (1995).
Author information
Authors and Affiliations
Additional information
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 3, pp. 423–427, May–June, 1999.
Rights and permissions
About this article
Cite this article
Makara, V.A., Bolotovets, N.S., Vakulenko, O.V. et al. Regularities of the photoluminescence of porous silicon after chemical etching in HF. J Appl Spectrosc 66, 458–463 (1999). https://doi.org/10.1007/BF02676782
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02676782