Abstract
The kinetics of WS2 layer growth at the interface of tungsten with molten metals saturated with silicon is studied. Research is performed at 1200°C using melts based on copper, silver, and tin. It was established that WSi2 layer growth in these melts obeys a “parabolic” rule but the corresponding growth rate constants differ markedly, i.e., from 3.4·10−11 m2/sec (melt based on copper) to 1.5·10−13 m2/sec (melts based on silver and tin). The reasons for this difference are discussed.
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Additional information
Institute for Problems of Materials Science, Ukraine National Academy of Sciences, Kiev. Translated from Poroshkovaya Metallurgiya, Nos. 11–12(410), pp. 86–88, November–December, 1999.
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Skorokhod, V.V., Titov, V.P. & Churakov, M.M. Kinetics of disilicide layer growth at the interface of tungsten with molten copper, silver, and tin saturated with silicon. Powder Metall Met Ceram 38, 608–609 (1999). https://doi.org/10.1007/BF02676195
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DOI: https://doi.org/10.1007/BF02676195