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The effect of temperature on the photoluminescence ofp-CuGaSe2 single crystals

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Abstract

We studied the temperature dependences of spectral bands and of the outer quantum yield of the edge photoluminescence (PhL) of p-CuGaSe2 single crystals obtained by the method of chemical transport reactions. We determined the activation energies of acceptor levels and showed that the temperature dependence of the intensity of PhL is determined by an acceptor level of 35 meV below the Debye temperature and of 150 meV above the Debye temperature. The spectra of the edge PhL at 300 and 80 K are determined mainly by band-band optical transitions.

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Authors and Affiliations

  1. Belarusian State University of Information Science and Radioelectronics, 6, P. Brovka St., 220069, Minsk, Belarus

    I. V. Bodnar

  2. Institute of Solid-State Physics and Semiconductors, National Academy of Sciences of Belarus, Belarus

    V. A. Ivanov

Authors
  1. I. V. Bodnar
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  2. V. A. Ivanov
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 4, pp. 590–593, July–August, 1998.

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Bodnar, I.V., Ivanov, V.A. The effect of temperature on the photoluminescence ofp-CuGaSe2 single crystals. J Appl Spectrosc 65, 614–617 (1998). https://doi.org/10.1007/BF02675657

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  • DOI: https://doi.org/10.1007/BF02675657

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