Abstract
The spectrum of the coefficient of optical absorption in silicon in the presence of internal (elastic, mechanical) stresses is calculated. Band splitting, including the weight factor of the split subbands, is allowed for. An ordinary equation for the optical-absorption coefficient is obtained by allowing for a correction that reflects the real relation between the energy of quantum pulses and the actual forbidden gap. The results obtained can be used in practice for assessing the internal stresses of silicon crystals and structures as well as for diagnostics of recombination parameters of imperfect silicon.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 4, pp. 576–580, July–August, 1998.
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Patrin, A.A., Tarasik, M.I. Optical-absorption spectrum of silicon containing internal elastic stresses. J Appl Spectrosc 65, 598–603 (1998). https://doi.org/10.1007/BF02675654
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DOI: https://doi.org/10.1007/BF02675654