Electroluminescence kinetics ofp-n-transitions with leakages

Abstract

The kinetics of the decay in the electroluminescence intensity after gating a rectangular pulse of current in the p-n-transition with inhomogeneities, in particular, accumulations of dislocations is calculated. The basic assumptions are: on gating the rectangular pulse of current, a portion of the electrons injected into the thin p-region is extracted into the n-region, whereas the same number of electrons are injected into the inhomogeneity where they recombine without emission; the intensity of nonradiative recombination on the inhomogeneity is limited by drift of majority charge carriers (by leakages). It is shown that nonradiative recombination on inhomogeneities leads to nonexponential kinetics of electroluminescence, whose instantaneous relaxation time decreases with time.