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Procedure for rapid spectroscopic control of the distribution of oxygen and of doping impurities in silicon ingots

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Abstract

Spectral dependences of the coefficients of absorption by free carriers and of multiphoton absorption by a silicon lattice in the region of the interstitial oxygen band at 5.8 μm are established. A procedure for measurement of the distribution of oxygen and alloying impurities in silicon ingots is given. The effectiveness of the spectrometers developed for controlling the segregation of impurities and nonstationary convection of the silicon melt in growing ingots by the Czochralski method is shown.

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Authors
  1. V. V. Litvinov
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  2. A. N. Petukh
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  3. Yu. M. Pokotilo
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Additional information

Belarusian State University, 4, F. Skorina Ave., Minsk, 220080, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 5, pp. 655–659, September–October, 1997.

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Litvinov, V.V., Petukh, A.N. & Pokotilo, Y.M. Procedure for rapid spectroscopic control of the distribution of oxygen and of doping impurities in silicon ingots. J Appl Spectrosc 64, 668–672 (1997). https://doi.org/10.1007/BF02675331

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  • DOI: https://doi.org/10.1007/BF02675331

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