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Atomic Energy

, Volume 86, Issue 5, pp 368–374 | Cite as

Uncooled semiconductor detectors based on crystals of wide bandgap compounds grown from the gas phase

  • V. M. Zaletin
  • A. A. Mel'nikov
  • I. M. Nozhkina
  • V. I. Fomin
Articles

Abstract

Particular attention is devoted to investigating the spectrometric characteristics of detectors based on crystals of wide bandgap compounds (GaAs, HgI 2, andCd 1−xZnxTe) grown from the gas phase. The results show that gas-phase methods are more promising in developing a crystal technology for uncooled semiconductor detectors.

Keywords

GaAs Epitaxial Layer ZnTe Gallium Arsenide Semiconductor Detector 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic/Plenum Publishers 1999

Authors and Affiliations

  • V. M. Zaletin
  • A. A. Mel'nikov
  • I. M. Nozhkina
  • V. I. Fomin

There are no affiliations available

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