Abstract
Electrical and structural measurements have been performed on novel test structures incorporatingp-type GaAs epilayers grown by organometallic vapor phase atomic layer epitaxy on the vertical sidewalls of semi-insulating GaAs rods formed by ion-beam-assisted etching. Preliminary results indicate that the vertical-sidewall epilayers have excellent crystal quality and sufficient electrical quality to support a sidewall-epitaxy device technology. Some examples of candidate electronic, electrooptic, and photonic devices for vertical-sidewall fabrication are FETs, resistors, waveguides, modulators, and quantum-wire and quantum-dot lasers.
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Gladden, D.B., Goodhue, W.D., Wang, C.A. et al. Electrical and structural characterization of GaAs vertical-sidewall epilayers grown by atomic layer epitaxy. J. Electron. Mater. 21, 109–114 (1992). https://doi.org/10.1007/BF02670929
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DOI: https://doi.org/10.1007/BF02670929