Abstract
To understand the role of thermal stresses in the generation, multiplication, and propagation of dislocations in CdTe single crystals produced by directional solidification, constitutive models which accurately reflect the elastic-viscoplastic behavior of CdTe over a wide range of temperatures are needed. In this article, the relevant reported mechanical behavior of CdTe is reviewed and discussed. Constitutive equations developed for single slip, isothermal behavior of elemental semiconductor crystals by Haasen and co-workers, which include dislocation density as the important internal variable, are then extended to include an additional dislocation arrangement internal variable as well as a high-temperature, time-dependent recovery behavior. The constitutive framework is incorporated in a continuum slip framework to include the possibility of multiple slip and to relate slip system shear strain rates to the macroscopic plastic strain rate. Comparison of the model with available experimental data for the small strain case over a wide range of temperatures is presented. Slip system interaction is included. These constitutive equations can then be used in computational analyses of thermal stress generation for comparison with characterized crystals grown in microgravity and ground-based experiments.
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This article is based on a presentation made in the symposium entitled “Microgravity Solidification, Theory and Experimental Results” as a part of the 1993 TMS Fall meeting, October 17-21, 1993, Pittsburgh, PA, under the auspices of the TMS Solidification Committee.
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Moosbrugger, J.C., Levy, A. Constitutive Modeling for CdTe Single Crystals. Metall Mater Trans A 26, 2687–2697 (1995). https://doi.org/10.1007/BF02669425
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DOI: https://doi.org/10.1007/BF02669425