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Improved strain-anneal crystal growth technique

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Abstract

A new method of growing iron single crystals* of predetermined orientation is described. *U.S. Patent No. 3694269. This technique differs from the conventional strain-anneal method in that pulse heating is used to suppress random nucleation of undesired grains ahead of the growth interface, rather than a traveling “sharp” temperature gradient which is often difficult to attain. The procedures used to grow large α-iron single crystals with the new technique are fully described. A significant advantage of this method is that large oriented single crystals, 25 cm (10 in.) or greater in length, can be grown from rods or strip in a few hours, with a much higher probability of success than can be obtained with the conventional technique, which typically requires several days to obtain crystals of this size.

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Authors and Affiliations

  1. Physics Department, Research Laboratories, General Motors Corporation, General Motors Technical Center, 48090, Warren, Mich

    Donald J. Bailey (Senior Research Metallurgist) & Earl G. Brewer (Senior Research Technician)

Authors
  1. Donald J. Bailey
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  2. Earl G. Brewer
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Bailey, D.J., Brewer, E.G. Improved strain-anneal crystal growth technique. Metall Trans A 6, 403 (1975). https://doi.org/10.1007/BF02667297

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  • DOI: https://doi.org/10.1007/BF02667297

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