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N-Type Hg1−xCdxTe: Undoped x = 0.3 LPE material for sprite IR detectors

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Abstract

The requirement for two color Sprite detectors, with elements sensitive in the ranges 3-5 μn (MW) and 8-14 μn (LW) at 77K, is met using Hg1−xCdxTe elements of composition x = 0.3 and x = 0.2, respectively. The need for low defect levels for increased performance indicates the use of liquid phase epitaxy (LPE). While LW material is fairly well characterized, the growth and conversion to n-type of MW LPE has proved more difficult. Reported work shows limited data and limited success in converting MW LPE to n-type, and this primarily in donor-doped material. This paper describes the growth, annealing to n-type and characterization of Hg0.7Cd0.3Te. High n-type conversion yields were obtained, with low donor levels (mid-1013 to mid-1014 cm−3), high mobility (>104 cm2 (Vs)−1) and long minority carrier lifetime (>10 us).

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Author notes

  1. A. McAllister

    Present address: Post Production & Graphic Design Dept, BBC TV Centre, Wood Lane, W12 7RJ, London, UK

  2. S. Barton

    Present address: , 17 Blackwater Mews, SO40 2GL, Totton, Southampton, UK

  3. D. T. Dutton

    Present address: DRA Malvern, St. Andrews Road, WR14 3PS, Great Malvern, Worcestershire, UK

Authors and Affiliations

  1. GEC-Marconi Infra-Red Limited, Millbrook Industrial Estate, SO15 OEG, Southampton, UK

    A. McAllister, E. S. O’keefe, P. Capper, F. A. Capocci, S. Barton & D. T. Dutton

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  1. A. McAllister
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  2. E. S. O’keefe
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  3. P. Capper
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  4. F. A. Capocci
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  5. S. Barton
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  6. D. T. Dutton
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McAllister, A., O’keefe, E.S., Capper, P. et al. N-Type Hg1−xCdxTe: Undoped x = 0.3 LPE material for sprite IR detectors. J. Electron. Mater. 25, 1014–1018 (1996). https://doi.org/10.1007/BF02666738

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  • DOI: https://doi.org/10.1007/BF02666738

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