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Mg2Si buffer layers on Si(100) prepared by a simple evaporation method

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Abstract

The formation of Mg2Si(100), ao= 6.39Å, on Si(100) substrates has been investigated. Mg was first evaporated onto Si(100) surfaces and Mg2Si (100) films were formed in a subsequent annealing process. The Mg2Si layers were characterized by x-ray diffraction and transmission electron microscopy analysis. Optical and scanning electron microscopy analysis show the surface morphology to be smooth. The films are stable under thermal cycling and exhibit low resistivity. Epitaxial films of Mg2Si on Si(100) could be an ideal substrate for mercury cadmium telluride and antimonide based III-V semiconductor for mid-infrared devices because of its close lattice matching (the lattice misfit factor is less than 1.5%).

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Authors and Affiliations

  1. Structured Materials Industries Inc., 08854, Piscataway, NJ

    G. S. Tompa & Y. B. Li

  2. Naval Surface Warfare Center, 20903, Silver Spring, MD

    D. Agassi

  3. Stevens Institute of Technology, 07030, Hoboken, NJ

    S. I. Kim & S. K. Hong

Authors
  1. G. S. Tompa
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  2. Y. B. Li
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  3. D. Agassi
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  4. S. I. Kim
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  5. S. K. Hong
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Tompa, G.S., Li, Y.B., Agassi, D. et al. Mg2Si buffer layers on Si(100) prepared by a simple evaporation method. J. Electron. Mater. 25, 925–929 (1996). https://doi.org/10.1007/BF02666725

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  • DOI: https://doi.org/10.1007/BF02666725

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