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MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates

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Abstract

The growth of GaN and AlGaN by molecular beam epitaxy (MBE) has been studied using GaN/SiC substrates. The GaN/SiC substrates consisted of ∼3 μm thick GaN buffer layers grown on 6H-SiC wafers by metalorganic vapor phase epitaxy (MOVPE) at Crée Research, Inc. The MBE-grown GaN films exhibit excellent structural and optical properties—comparable to the best GaN grown by MOVPE. AlxGa1−xN films (x ∼ 0.06-0.08) and AlxGa1−xN/GaN multi-quantum-well structures which display good optical properties were also grown by MBE on GaN/SiC substrates.

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Johnson, M.A.L., Fujita, S., Rowland, W.H. et al. MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates. J. Electron. Mater. 25, 793–797 (1996). https://doi.org/10.1007/BF02666638

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  • DOI: https://doi.org/10.1007/BF02666638

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