Abstract
For implantation of silicon dopant into gallium arsenide, sheet resistance and damage increase as the ion dose rate increases in the high-dose regime (>5.0 × 1013 cm−2). But, in the low-dose regime (<5.0 × 1012 cm−2), although damage still increases with dose rate, the sheet resistance decreases. This qualitative difference implies that there must be a crossover point between the low- and high-dose regimes in the effect of damage and defect formation on dopant activation. This paper describes experiments in which damage and silicon dose were independently varied through the crossover point. Thermal wave, ion channeling, Hall effect measurements, and transmission electron microscopy were used to characterize structural and electrical changes that occur near the crossover. In GaAs implanted with silicon (29Si+) at doses between 3 × 1012 and 6 × 1013cm−2, it is shown that electrical activation for low dose rates first begins to exceed that for high dose rates at a dose of 2 × 1013 cm−2. Rapid growth of Type I dislocations also begins near this same dose, suggesting that there may be a link between defect formation and the crossover to negative dose-rate effects in the high-dose regime.
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Jasper, C., Morton, R., Lau, S.S. et al. Dose-rate effects in silicon-implanted gallium arsenide from low to high doses. J. Electron. Mater. 25, 107–111 (1996). https://doi.org/10.1007/BF02666182
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DOI: https://doi.org/10.1007/BF02666182