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Deep levels in undoped Si1−xGex grown by gas-source molecular beam epitaxy

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Abstract

Deep levels have been identified and characterized in undoped Si1−xGex alloys grown on silicon substrates by gas-source molecular beam epitaxy. Hole traps in the p-type layers have activation energies ranging from 0.029–0.45 eV and capture cross sections (σ∞ ranging from 10−9 to 10−20 cm2. Possible origins of these centers are discussed.

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References

  1. J.C. Bean,J. Cryst. Growth 81, 411 (1987).

    Article  CAS  Google Scholar 

  2. J. Hinckley, V. Sankaran and J. Singh,Appl. Phys. Lett. 55, 2010 (1989).

    Article  Google Scholar 

  3. S.H. Li, S.W. Chung, J.K. Rhee and P.K. Bhattacharya,J. Appl. Phys. 71, 4916 (1992).

    Article  CAS  Google Scholar 

  4. S.R. Smith, A.O. Evwaraye and W.C. Mitchel,J. Appl. Phys. 65, 1130 (1989).

    Article  CAS  Google Scholar 

  5. D.V. Lang, R.A. Logan and M. Jaros,Phys. Rev. B19, 1015 (1979).

    Google Scholar 

  6. O.F. Sankey and J.D. Dow,Phys. Rev. B 26, 3243 (1982).

    Article  CAS  Google Scholar 

  7. B.N. Mukashev, L.G. Kolodin, K.H. Nussupov, A.V. Spitsyn and V.S. Vavilov,Radia. Eff. 46, 770 (1980).

    Google Scholar 

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Authors and Affiliations

  1. Solid State Electronics Laboratory, Department of Electrical Engineering & Computer Science, University of Michigan, 48109-2122, Ann Arbor, Michigan

    S. H. Li, P. K. Bhattacharya & S. W. Chung

  2. University of Dayton Research Institute, 300 College Park Drive, 45469-0178, Dayton, Ohio

    S. R. Smith

  3. Materials Directorate, Wright Laboratory, 45433-6533, Wright-Patterson Air Force Base, Ohio

    W. C. Mitchel

Authors
  1. S. H. Li
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  2. P. K. Bhattacharya
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  3. S. W. Chung
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  4. S. R. Smith
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  5. W. C. Mitchel
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Li, S.H., Bhattacharya, P.K., Chung, S.W. et al. Deep levels in undoped Si1−xGex grown by gas-source molecular beam epitaxy. J. Electron. Mater. 22, 151–153 (1993). https://doi.org/10.1007/BF02665738

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  • DOI: https://doi.org/10.1007/BF02665738

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