The migrational characteristics of the cusp-oriented α/κ interface in the Cu-Si system

Abstract

The mobility of the coherentα/κ boundaries in the copper-silicon system was studied in a Cu plus 5.16 wt pct Si alloy with a lamellar microstructure. A new resistometric technique was employed to study the isothermal kinetics ofα/κ interphase boundary migration as a function of driving force at two reaction temperatures, 702° and 568°C. The driving force was shown to be linearly related to the temperature change, δT, and the experimental results show that the functional relationship between mobility and δT exhibits an initial linear dependence followed by a sharp rise in mobility at higher values of δT. Upquench and down-quench results were found to be equivalent, implying that the mechanism for boundary motion is independent of whether the boundary is moving into theα or into theκ phase. The results demonstrate that theα/κ interface does not move normal to itself by the long range bulk diffusion of silicon at low values of δT during the initial periods of the reaction times. A pole mechanism with its associated dislocation node configuration, consisting ofa/2〈112〉 andc[00.1] pole dislocations anda/6〈112〉 transformation partial, is proposed as the mechanism for the migration of the coherent fcc/hcp boundary in the range of small δT. The results obtained at the different reaction temperatures are consistent with the mechanism proposed, and quantitative agreement exists between the experimental and predicted mobilities. The sharp rise in mobility at larger values of δT could not be explained in terms of the pole mechanism. Attempts to rationalize this behavior in terms of a two dimensional nucleation model were not successful since unrealistically low values of surface energy would be required.