Abstract
A model for defects in hydrogenated amorphous silicon (TS > 150‡C) observed by light-induced E.S.R. is presented. It is based on a comparison with E.S.R. signals observed from irradiation defects in crystalline silicon. The magnitude of the E.S.R. signal as a function of hydrogen concentration is also discussed.
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References
J.C. Knights, D.K. Biegelsen and I. Solomon, Solid State Comm.22 , pp. 133–137, (1977).
Y. Lee and J.W. Corbett, Phys. Rev. B8 , pp. 2810–2826, (1973).
G.D. Watkins and J.W. Corbett, Phys. Rev.138 , n‡ 2A, pp. 543–554, (1965).
I. Solomon, J. Perrin and B. Bourdon, Proceeding of 14th International Conf. of Phys. Semiconductors, Edinburgh (1978).
D. Kaplan, P.A. Thomas, N. Sol and G. Velasco, Appl. Phys. Lett.33 (5), pp. 440–442, (1978).
B. Bourdon, J. Fontenille and E. Ligeon, J. Penin and I. Solomon, to be published.
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Friederich, A., Kaplan, D. Light-induced E.S.R. in amorphous silicon. J. Electron. Mater. 8, 79–85 (1979). https://doi.org/10.1007/BF02663264
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DOI: https://doi.org/10.1007/BF02663264