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Radiation induced crystallization of amorphous Si : H alloy

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Abstract

Two stage radiation enhanced nucleation has been observed in thin films of hydrogenated amorphous silicon (a-Si : H). A microcrystalline-amorphous(μc- a) mixed phase of the Si : H alloy can be produced at room temperature from RF glow discharge amorphous Si : H thin films (approximately 1000 Å thick) by using neutron irradiation with a dose of 2 × 1016 neutrons/cm2. The subsequent annealing at 150 °C using a built-in heating stage in a transmission electron microscope (TEM) can produce a high volume fraction of μc phase with an average grain size of 150 Å. According to thein situ annealing data, the neutron irradiated Si:H film exhibits a nucleation controlled phase transformation.

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Authors and Affiliations

  1. Department of Metallurgy and Materials Science, The University of Toronto, 184 College Street, M5S 1A4, Toronto, ON, Canada

    Y. C. Koo (Graduate Student), R. Perrin (Assistant Professor) & K. T. Aust (Professor)

  2. Department of Electrical Engineering, The University of Toronto, 184 College Street, M5S 1A4, Toronto, ON, Canada

    S. Zukotynski (Professor)

Authors
  1. Y. C. Koo
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  2. R. Perrin
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  3. K. T. Aust
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  4. S. Zukotynski
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Koo, Y.C., Perrin, R., Aust, K.T. et al. Radiation induced crystallization of amorphous Si : H alloy. Metall Trans A 19, 1345–1349 (1988). https://doi.org/10.1007/BF02662595

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  • DOI: https://doi.org/10.1007/BF02662595

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