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Measurement of the parameters of surface traps in mos-structures based on the synthesis of an electric model

  • Electromagnetic Measurements
  • Published:
Measurement Techniques Aims and scope

Abstract

A method of determining the parameters of surface traps based on the synthesis of an electric circuit using data from measurements of the components of the admittance is proposed. An automated system and software which realize this method are described. The advantages of the technique are pointed out.

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References

  1. E. N. Nicollian and J. R. Brews. MOS Physics and Technology, Wiley, New York (1982).

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  2. S. Sh. Baltyanskii, “Methods and means of measuring the distributed parameters of the admittance of MOS-structures,” Candidate Dissertation, Penza (1993).

  3. É. A. Guillemin, Synthesis of Passive Networks [Russian translation], Svyaz', Moscow (1970).

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  4. K. I. Zapodovnikov, Prib. Tekh. Éksp., No. 5, 115, (1986).

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Authors
  1. S. Sh. Baltyanskii
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  2. O. V. Karpanin
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  3. K. N. Chernetsov
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Additional information

Translated from Izmeritel'naya Tekhnika, No. 5, pp. 39–43, May, 1995.

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Baltyanskii, S.S., Karpanin, O.V. & Chernetsov, K.N. Measurement of the parameters of surface traps in mos-structures based on the synthesis of an electric model. Meas Tech 38, 549–555 (1995). https://doi.org/10.1007/BF02661047

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  • DOI: https://doi.org/10.1007/BF02661047

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