Abstract
The dependence of selectivity on HC1 flow and operating pressure for an 850° C SiH2Cl2/ HC1 based SEG process has been investigated. The polysilicon nuclei density (#/cm2 measured by optical microscope) on large unpatterned areas of deposited SiO2 was used to quantify the selectivity of different process conditions. Three distinct selectivity regimes were identified: (a) a non-selective regime with >106 nuclei/cm2, (b) a pattern dependent regime with <106 nuclei/cm2, and (c) an intrinsically selective regime with <1 nuclei/cm2. The intermediate, pattern dependent, selectivity regime was characterized by a much lower density of silicon nuclei in and around patterned areas where windows of Si are exposed, thus making a loss of selectivity more difficult to detect. This phenomenon is shown to arise from feature scale (<100 micron) lateral fluxes of gas phase species. An intrinsically selective regime suitable for VLSI manufacturing, which avoids the high nuclei density associated with the pattern dependent regime, is identified.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. O. Borland and C. I. Drowley, Solid State Technology, Au- gust 1985, p. 141.
N. Kasai, N. Endo, A. Ishitani, and H. Kitajima, IEDM Tech. Digest, 419 (1985).
N. Endo, N. Kasai, A. Ishitani, H. Kitajima, and Y. Kurogi, IEEE Trans. Electron. DevicesED-33, 1659 (1986).
S. Nagao, K. Higashitani, Y. Akasaki, and H. Nakata, IEEE Trans. Electron DevicesED-33, 1738 (1986).
T. Yamada, S. Samata, H. Takato, and Y. Matsushita, IEDM Tech. Digest, 35 (1989).
C. H. Dennison, A. T. Wu, P. K. Ko, C. I. Drowley, and D. Bradbury, IEDM Tech. Digest, 204 (1985).
P. J. Schubert and G. W. Neudeck, IEEE Electron Dev. Lett.11, 181 (1990).
P. J. Schubert and G. W. Neudeck, IEEE Trans Electron Dev.37, 2336 (1990).
R. P. Zingg, J. A. Friedrich, G. W. Neudeck, and B. Hofflin- ger, IEEE Trans. Electron Dev.37, 1452 (1990).
C. I. Drowley and M. L. Hammond, Solid State Technology, May 1990, p. 135.
J. O. Borland and I. Beinglass, Solid State Technology, Jan- uary 1990, p. 73.
V. S. Ban and S. L. Gilbert, J. Electrochem. Soc.122, 1382 (1975).
W. A. P. Claassen and J. Bloem, J. Cryst. Growth50, 807 (1980).
J. Bloem and L. J. Giling, Current Topics in Mater. Sci.1, 147 (1978).
F. Langlais, F. Hottier and B. Cadoret, J. Cryst. Growth56, 659 (1982).
SOLGASMIX-PV For The PC, B. W. Sheldon, Oak Ridge National Lab., 1989.
L. P. Hunt and E. Sirtl, J. Electrochem. Soc.119, 1741 (1972).
R. F. Lever, IBM Journal 465 (1964).
W. A. P. Claassen and J. Bloem, J. Electrochem. Soc.127, 194 (1980).
W. A. P. Claassen and J. Bloem, J. Electrochem. Soc.127, 1836 (1980).
J. L. Regolini, D. Bensahel, E. Scheid and J. Mercier, Appl. Phys. Lett.54, 658 (1989).
M. Niwano, Y. Takakuwa, H. Katakura, and N. Miyamoto, J. Vac. Sci. Technol.A9, 212 (1991).
W. G. Oldham and R. Holmstrom, J. Electrochem. Soc.114, 381 (1967).
A. Ishitani, N. Endo, and H. Tsuya, Japan. J. Appl. Phys.23, L391 (1984).
J. F. O’Hanlon, A User’s Guide to Vacuum Technology (John Wiley and Sons, New York, 1980) p. 18.
Phase Transformations in Metals and Alloys, D. A. Porter and K. E. Easterling (Van Nostrand Reinhold Co, New York, 1981), p. 266.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Fitch, J.T., Denning, D.J. & Beard, D. The pattern dependence of selectivity in low pressure selective epitaxial silicon growth. J. Electron. Mater. 21, 455–462 (1992). https://doi.org/10.1007/BF02660411
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02660411