Abstract
A new method of forming electrical contacts on high purity p-type silicon has been developed. The resultant contacts are ohmic from 18 to 300K. The electrical sparking technique permits localized doping in the contact region of the device while avoiding the over-all high annealing temperatures required by diffusion. Indium solder is used for metallization and attachment of wires to the sparked regions. The process is simple and easily applied to samples for measuring electrical transport properties or to devices, such as silicon solar cells.
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Dobbs, B.C., Hemenger, P.M. & Smith, S.R. Ohmic contacts on high purity P-type silicon. J. Electron. Mater. 6, 705–716 (1977). https://doi.org/10.1007/BF02660345
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DOI: https://doi.org/10.1007/BF02660345