Abstract
An X-ray line broadening study of germanium and silicon polycrystal1ine samples heavily ball-milled at room temperature showed that both elements exhibited substantial plastic flow, the isotropic microstrain being about 0.15%. Anisotropy was observed in the coherently diffracting domain sizes, which were reduced to about 400 A. Upon annealing, strain relief and crystal growth occurred, the dislocation densities being reduced to half their maximum values at 440° and 520°C for germanium and silicon respectively.
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Wheeler, E.J., Lewis, D. The deformation and annealing characteristics of germanium and silicon. J. Electron. Mater. 6, 597–606 (1977). https://doi.org/10.1007/BF02660340
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DOI: https://doi.org/10.1007/BF02660340