Abstract
A model is presented for the Cu2S/ZnxCd1-xS heterojunction that is based on the existence of a laterally graded zinc rich region just below the Cu2S-ZnCdS interface. Integrals for short circuit current density and current density versus applied voltage are presented. The current-voltage characteristics, in particular the increase in open circuit voltage and decrease in short circuit current density that occur with increasing zinc content, follow trends that have been seen experimentally for junctions formed by ion-exchange.
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Hsu, W.B., Burton, L.C. A model for laterally graded Cu2S/ZnxCd1-xS photovoltaic heterojunctions. J. Electron. Mater. 10, 703–721 (1981). https://doi.org/10.1007/BF02660129
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DOI: https://doi.org/10.1007/BF02660129