Abstract
We developed Raman spectroscopy to characterize the hydroxyl (OH) solubility in fused silica and thermally grown steam SiO2 from 695 to 1000‡C and 1–10 atm steam pressure. The technique was extended to measure the OH diffusion profiles in bulk v-SiO2, and the derived diffusion coefficients supplement those published in the literature. Fused silicas processed with higner fictive temperatures display larger initial OH solubilities which decrease with time, but saturations at temperatures as low as 600‡C remove much of the prior thermal history as the glass structurally relaxes. The OH solubility appears to be proportional to the square root of external steam pressure; however, the quasiequilibrium temperature dependence is unresolved. The behavior of OH in fused silica and the thermally grown oxide is very similar when the two materials are identically processed.
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Mikkelsen, J.C., Galeener, F.L. & Mosby, W.J. Raman characterization of hydroxyl in fused silica and thermally grown SiO2 . J. Electron. Mater. 10, 631–651 (1981). https://doi.org/10.1007/BF02660125
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DOI: https://doi.org/10.1007/BF02660125