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The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire

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This paper presents a comparative study of the properties of GaN grown by organometallic vapor phase epitaxy, using both a GaN and A1N buffer layer, as a function of sapphire orientation (c-plane vs a-plane). Results are presented for varying the thickness of the buffer layer, varying the growth temperature of the GaN film, and also varying the ammonia/trimethylgallium mass flow ratio. The electron Hall mobilities of GaN films grown on an A1N buffer layer were, in general, higher compared to films grown using a GaN buffer layer. In addition, growth on a-plane sapphire resulted in higher quality films (over a wider range of buffer thicknesses) than growth on c-plane sapphire. The room temperature electron mobilities were also found to be dependent on, not only the growth temperature, but also the ammonia/trimethylgallium mass flow ratio.

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Doverspike, K., Rowland, L.B., Gaskill, D.K. et al. The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire. J. Electron. Mater. 24, 269–273 (1995).

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