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Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fields

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Abstract

The static electron velocity-field characteristics for n-In0.53Gan0.47AS have been measured at temperatures from 95 K to 300 K over a range of electric field strengths from about 10 kV/cm to beyond 100 kV/cm. The velocity decreases monotonically with increasing electric field at all temperatures over the range of field strengths investigated. The electron velocity-field curves for In0.53Ga0.47As exhibit a larger peak-to-valley ratio, lower high-field velocity, and a smaller high-field temperature dependence than those for GaAs measured using the same experimental technique.

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Authors and Affiliations

  1. Electrical Engineering Research Laboratory, Department of Electrical Engineering, University of Illinois, 61801, Urbana-Champaign, Urbana, Illinois

    T. H. Windhorn

  2. Materials Research Laboratory, University of Illinois, 61801, Urbana-Champaign, Urbana, Illinois

    L. W. Cook

  3. Coordinated Science Laboratory, University of Illinois, 61801, Urbana-Champaign, Urbana, Illinois

    G. E. Stillman

Authors
  1. T. H. Windhorn
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  2. L. W. Cook
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  3. G. E. Stillman
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Windhorn, T.H., Cook, L.W. & Stillman, G.E. Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fields. J. Electron. Mater. 11, 1065–1082 (1982). https://doi.org/10.1007/BF02658917

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  • DOI: https://doi.org/10.1007/BF02658917

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