Abstract
The transport properties and defect levels in Si-implanted semi-insulating and liquid phase epitaxial InP have been studied by Hall and photoconductivity measurements. Wide variations in the conductivity and Hall coefficient have been measured in semi-insulating InP:Fe and the results have been analyzed and interpreted by appropriate charge neutrality models. The energy position of the Fe and Cr acceptor levels have been determined to be 0.68 and 0.40 eV, respectively, below the conduction band minimum. The implantation studies indicate that the electrical properties of the layers are very sensitive to implant dose and energy, the type and thickness of encapsulant and the anneal temperature. High-resistivity or p-type conductivity was observed in layers implanted with 6.0 × 1011 to 4.0 × 1012 cm−2 Si+. In general, better results were obtained with sputtered Si3N4 encapsulation. Varying amounts of Fe and Cr outdiffused to the active layer during annealing and a dominant defect, 0.56 eV below the conduction band, was observed in the photoconductivity spectra.
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References
W.H. Koschel, U. Kaufmann and S.G. Bishop, Solid State Commun.,21, 1069 (1977).
S. Fung, R.J. Nicholas and R.A. Stradling, J. Phys. C: Solid State Phys.,12, 5145 (1979).
See, for example, the relevant publications inSemi-Insulating III-V Materials, ed. by Rees (Shiva Pub-lications Limited, UK, 1980).
J.K. Rhee and P.K. Bhattacharya, J. Appl. Phys., 53 (to be published June 1982).
G.W. Iseler,Proceedings of the Seventh Inter-national Symposium on Gallium Arsenide and Related Compounds, St. Louis, ed. by C.M. Wolfe (The Insti-tute of Physics, London, 1979), p. 144.
J.P. Donnelly and C.E. Hurwitz, Appl. Phys. Lett.,31, 418 (1977).
D.E. Davies, J.P. Lorenzo and T.G. Ryan, Solid-state Electron.,21, 981 (1978).
T. Nishioka and Y. Ohmachi, J. Appl. Phys.,51, 5789 (1980).
N. Sclar, Phys. Rev.,104, 1559 (1956).
S.G. Bishop, P.B. Klein, R.L. Henry and B.D. McCombe, in Ref. 3, p. 161.
S. Fung and R.J. Nicholas, in Ref. 3, p. 154.
Y.P. Varshni, Physics,39, 149 (1967).
P.K. Bhattacharya, J.K. Rhee, S.J.T. Owen, J.G. Yu, K.K. Smith and R.Y. Koyama, J. Appl. Phys.,52, 224 (1981).
H. Morkoc, J.T. Andrews and S.B. Hyder, Electron Lett.,14, 715 (1978).
J. Kasahara, J.P. Gibbons, T.J. Magee and J. Peng, J. Appl. Phys.,51, 119 (1980).
.W. Yu, in Ref. 3, p. 167.
D.E. Davies, J.J. Comer, J.P. Lorenzo and T.G. Ryan, Appl. Phys. Lett.,32, 192 (1979).
J.P. Donnelly and C.E. Hurwitz, Solid-state Elec-tron.,23, 943 (1980).
K.V. Vaidyanathan, C.L. Anderson, H.L. Dunlap and D.E. Holmes, Nuclear Instruments and Methods,182/183, 631 (1981).
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Rhee, J.K., Bhattacharya, P.K. Transport properties and defects in semi-insulating and Si-implanted InP. J. Electron. Mater. 11, 979–1000 (1982). https://doi.org/10.1007/BF02658911
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DOI: https://doi.org/10.1007/BF02658911