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Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD)

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Abstract

Zinc incorporation by post-growth metalorganic vapor phase diffusion (MOVPD) is used to achieve high p-doping, which is desirable for the fabrication of photodiodes. Diethylzinc (DEZ) is used as precursor and Zn is diffused into InP and InAs0.6P epitaxial layers grown by low pressure metalorganic vapor phase epitaxy (MOVPE) on different substrate orientations, enabling the investigation of the dislocation density on the Zn incorporation. Diffusion depths are measured using cleave-and-stain techniques, resistivity measurements, electrochemical profiling, and secondary ion mass spectroscopy. High hole concentrations of, respectively, 1.7 1019 and 6 1018 cm−3, are obtained for, respectively, InAs0.60P and InP. The diffusion coefficients are derived and the Zn diffusion is used for the fabrication of lattice-mismatched planar PIN InAsP/InGaAs photodiodes.

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Author notes

  1. M. D'Hondt

    Present address: Sidmar N.V., John Kennedylaan 51, B-9042, Gent, Belgium

Authors and Affiliations

  1. Department of Information Technology (INTEC), University of Gent-IMEC, Sint-Pietersnieuwstraat 41, B-9000, Gent, Belgium

    K. Vanhollebeke, I. Moerman, P. Van Daele & P. Demeester

  2. Sidmar N.V., John Kennedylaan 51, B-9042, Gent, Belgium

    K. Vanhollebeke

Authors
  1. K. Vanhollebeke
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  2. M. D'Hondt
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  3. I. Moerman
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  4. P. Van Daele
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  5. P. Demeester
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Vanhollebeke, K., D'Hondt, M., Moerman, I. et al. Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD). J. Electron. Mater. 30, 951–959 (2001). https://doi.org/10.1007/BF02657716

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  • DOI: https://doi.org/10.1007/BF02657716

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