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The Ga-As-H-CI vapor phase epitaxial growth system

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Abstract

The equilibrium compositions in the Ga-As-H-Cl system saturated with GaAs(s) were determined in the range 625 to 875 °C by means of an iterative method of computation. Using the formalism of extent of reaction and the Gauss-Scidel reduction procedure in conjunction with the equilibrium partial pressure data, the deposition rates of GaAs(s) were found for a variety of input gas stream compositions and temperatures. These calculated maximum deposition rates are compared to the observed rates reported earlier and the discrepancies interpreted in terms of a quasi-equilibrium model according to which only a fraction(β) of the input gas stream actually equilibrates with the GaAs(s)-phase. Present results show thatβ takes on progressively larger values as the solid substrate temperature is increased.

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Authors and Affiliations

  1. The University of Washington, 98195, Seattle, WA

    H. G. Han (Graduate Research Assistant, 318 Roberts, FB-10) & Y. K. Rao (Professor, Department of Materials Science and Engineering, 323 Roberts, FB-10)

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  1. H. G. Han
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  2. Y. K. Rao
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Han, H.G., Rao, Y.K. The Ga-As-H-CI vapor phase epitaxial growth system. Metall Trans B 16, 97–105 (1985). https://doi.org/10.1007/BF02657494

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